InP single crystal wafer

Orientation:                    (100)
Size:                              2" diameter x 0.35 mm
Doping:                          Un- doped
Conducting type:             S-C
Polish:                            Two sides polished
Resistivity:                      (2.48-3.34)10^-1 ohm.cm
Mobility:                         4250-4340cm^2/V.S
EPD:                              <5000 /cm^2
Carrier Concerntration:    (4.34-5.91) ^15 /cmE-3

EPI ready surface and packing

Related Products

Other GaAs

InSb

Other InAs

InP

GaSb

Wafer Box

Film Coater

RTP Furnaces