Name: Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm
Brand: MTI
SKU: SiPc101D03C1R15000
Price: 149.0 USD
Availability: InStock

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Si

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

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$149.00 USD

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SKU: : \SiPc101D03C1R15000

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Single Crystal: Si
Growth Method: FZ (Floating Zone)
Type/Dopant: N/Phosphorus
Orientation: (111)
Resistivity: 15,000 - 25,000 ohm-cm
Diameter: 100 mm +/- 0.5 mm
Thickness: 0.3 mm +/- 0.025 mm
Primary Flat: <110>
Polish: One side polished

Optional: you may need tool below to handle the wafer ( click picture to order )


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Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

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