Name: Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001
Brand: MTI
SKU: SIAsc101D05C1deg4R0001
Price: 39.95 USD
Availability: InStock

1 1

Crystal Substrate A-Z
Si

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

27 in stock

$39.95 USD

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SKU: : \SIAsc101D05C1deg4R0001

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Specifications:

Single crystal Si, (CZ) (Prime Grade)
Conductivity: N type ( As doped)
Resistivity: 0.001~0.005 ohm-cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Size: 4" in diameter x 0.525 mm
Orientation: 4 degree off (111) +/- 0.5 deg
Polish: one side polished
Surface roughness: < 5A, RMS

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Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

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