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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 1-5 ohm-cm

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 1-5 ohm-cm

Regular price Price: RFQ

Regular price Sale price $209.00 USD
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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm - GEsba50D05C2R10US

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm - GEsba50D05C2R10US

Regular price Price: RFQ

Regular price Sale price $209.00 USD
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Ge Wafer (100) +/- 0.7 degree 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm

Ge Wafer (100) +/- 0.7 degree 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm

Regular price Price: RFQ

Regular price Sale price $209.00 USD
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Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

Regular price Price: RFQ

Regular price Sale price $209.00 USD
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Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US

Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US

Regular price Price: RFQ

Regular price Sale price $229.00 USD
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Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

Regular price $189.00 USD

Regular price Sale price $189.00 USD
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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type (Ga doped), resistivity: 0.001-0.01 ohm-cm - GEGaa50D05C2R0001US

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type (Ga doped), resistivity: 0.001-0.01 ohm-cm - GEGaa50D05C2R0001US

Regular price Price: RFQ

Regular price Sale price $209.00 USD
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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

Regular price Price: RFQ

Regular price Sale price $189.95 USD
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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

Regular price $239.00 USD

Regular price Sale price $239.00 USD
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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

Regular price $239.00 USD

Regular price Sale price $239.00 USD
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Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US

Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US

Regular price $229.00 USD

Regular price Sale price $229.00 USD
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Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

Regular price $209.00 USD

Regular price Sale price $209.00 USD
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Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US

Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US

Regular price $239.00 USD

Regular price Sale price $239.00 USD
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Ge Wafer (111) with 9.45 degree miscut , 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 0.1-0.5ohm-cm

Ge Wafer (111) with 9.45 degree miscut , 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 0.1-0.5ohm-cm

Regular price Price: RFQ

Regular price Sale price $189.00 USD
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Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm

Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm

Regular price Price: RFQ

Regular price Sale price $299.00 USD
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Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R: 10-20 ohm-cm

Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R: 10-20 ohm-cm

Regular price Price: RFQ

Regular price Sale price $299.00 USD
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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 1-5 ohm-cm

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 1-5 ohm-cm

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm - GEsba50D05C2R10US

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm - GEsba50D05C2R10US

Ge Wafer (100) +/- 0.7 degree 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm

Ge Wafer (100) +/- 0.7 degree 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm

Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US

Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US

Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type (Ga doped), resistivity: 0.001-0.01 ohm-cm - GEGaa50D05C2R0001US

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type (Ga doped), resistivity: 0.001-0.01 ohm-cm - GEGaa50D05C2R0001US

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US

Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US

Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US

Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US

Ge Wafer (111) with 9.45 degree miscut , 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 0.1-0.5ohm-cm

Ge Wafer (111) with 9.45 degree miscut , 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 0.1-0.5ohm-cm

Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm

Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm

Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R: 10-20 ohm-cm

Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R: 10-20 ohm-cm

Ge

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